Journal article

A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC

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Author list: Hjelm, Mats;Nilsson, Hans-Erik

Publication year: 2001

Start page: 199

End page: 208

Number of pages: 10

ISSN: 0378-4754

DOI: http://dx.doi.org/10.1016/S0378-4754(00)00262-7

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Abstract

A Monte Carlo (MC) study of the hole transport in 4H-SiC is presented using three different MC models. The three models represent different approximation levels regarding band structure and scattering formulation. The most advanced model is a completely k-vector dependent full band model while the simplest model uses three analytical bands with energy dependent scattering rates. The intermediate MC model uses a full band structure calculated using a simple k.p formulation. A comparison between the models in terms of coupling constants, scattering rate, temperature dependent mobility and saturation velocity is presented


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