Journal article

Three Dimensional Architectures of Ultra-high Density Semiconducting Nanowires Deposited on Chip

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Author list: Olin, Håkan

Publication year: 2003

Start page: 6284

End page: 6288

Number of pages: 5

ISSN: 0002-7863


Abstract

We report a ""clean"" and fast process, utilizing supercritical carbon dioxide, for producing ultrahigh densities, up to 10(12) nanowires per square centimeter, of ordered germanium nanowires on silicon and quartz substrates. Uniform mesoporous thin films were employed as templates for the nucleation and growth of unidirectional nanowire arrays orientated almost perpendicular to a substrate surface. Additionally, these nanocomposite materials display room-temperature photoluminescence (PL), the energy of which is dependent on the diameter of the encased nanowires. The ability to synthesis ultrahigh-density arrays of semiconducting nanowires on-chip is a key step in future ""bottom-up"" fabrication of multilayered device architectures for nanoelectronic and optoelectronic devices.


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