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Abstract

This paper describes the characterisation of an ultra-thin silicon semiconductor ?E detector to be used as a pre-cell ion hit detector in single ion experiments on individual, living cells. The characteristics of interest for this specific application are the hit detection efficiency, which has to be close to 100% to enable bombardment with either a single ion or a counted number of ions, the beam spreading, which should be as small as possible to maintain the targeting accuracy, and the vacuum tightness, since the detector is intended, if possible, to be used simultaneously as vacuum window. The hit detection efficiency was shown to be above 99% when detecting alpha particles or 2 MeV protons, the increase in beam size was about 1 µm and the vacuum tightness was comparable to that of the Si₃N₄ wafer which is normally used as vacuum window, thus the ?E detector fulfils the main criteria to function properly as a single ion hit detector. © 2008 Elsevier B.V. All rights reserved.

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