Conference proceedings article

A full band Monte Carlo study of high field carrier transport in 4H-SiC

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Author list: Hjelm, Mats;Nilsson, Hans-Erik

Publication year: 2000

Start page: 765

End page: 768

Number of pages: 4

View additional information: View in Web of Science


Abstract

The high field transport properties of 4H-SiC have been studied using a bipolar full band ensemble Monte Carlo model. The impact ionization transition rates and the phonon scattering rates for both electrons and holes have been calculated numerically from the full band structure. The simulation results show a large anisotropy in the impact ionization coefficients for both electrons and holes.


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